productfbrief thefcoolmos?fcefisfafnewftechnologyfplatformfoffinfneonsfmarketfleadingf highfvoltagefpowerfmosfetsfdesignedfaccordingftofthefrevolutionaryf superjunctionf(sj)fprinciple. 500vfcefportfoliofprovidesfallfbeneftsfoffaffastfswitchingfsjfmosfetfwhilefnotf sacrifcingfeasefoffuse.fasfthefcompletefcefseries,fdevicesfachievefextremelyf lowfconductionfandfswitchingflossesfandfcanfmakefswitchingfapplicationsf morefefcient,fmorefcompact,flighterfandfcooler. efficiency comparison 500v coolmos? ce vs competitor standard mosfet ccmfpfcfstage,f90vacfupftof400wf ? reducedfenergyfstoredfinfoutputf capacitanceff(e oss ) ? highfbodyfdiodefruggedness ? reducedfreversefrecoveryfchargef(q rr ) ? reducedfgatefchargef(q g ) benefts ? easyfcontrolfoffswitchingfbehavior ? improvedflightfloadfefciencyf comparedfftofpreviousfcoolmos?f generations ? costfattractivefalternativefcomparedf tofstandardfmosfets ? outstandingfreliabilityfwithfprovenf coolmos?fqualityfcombinedfwithf highfbodyfdiodefruggedness applications ? consumer ? lighting ? pcfsilverbox www.infneon.com/ce features 500vfcoolmos?fcefpowerfmosfet ipp50r280ce vs. standard mo s delta eciency @ v in =90v ac; plug&play s ce nario; r g,ex t =5? ; f=100khz; v out =400vdc ipp50r280ce vs. standard mo s eciency @ vin=90v ac; plug&play s ce nario; r g,ex t =5? ; f=100khz; v out =400vdc absolute eciency [% ] delta eciency [% ] p out [w] p out [w] 98 97 96 95 94 93 92 91 90 ipp50r280c e standard mo s 0,6 0,4 0,2 0,0 -0,2 -0,4 -0,6 -0,8 -1,0 50 100 150 200 250 300 350 400 ipp50r280c e standard mo s 40% q g reduction
productfbrief publishedfby f infineonftechnologiesfaustriafag 9500fvillach,faustria ?f2012finfineonftechnologiesfag. f allfrightsfreserved. visitfus: www.infineon.com orderfnumber:fb152-h9688-x-x-7600-db2012-0003 date:f 10 f/f2012 a tte ntio n pl ease ! thefinformationfgivenfinfthisfdocumentfshallfinfnofevent f befregardedfasfafguaranteefoffconditionsforfcharacteristicsf (beschafenheitsgarantie).fwithfrespectftofanyfexamplesf orfhintsfgivenfherein,fanyftypicalfvaluesfstatedfhereinfand/ orfanyfinformationfregardingfthefapplicationfoffthefdevice,f infneonftechnologiesfherebyfdisclaimsfanyfandfallfwarran- tiesfandfliabilitiesfoffanyfkind,fincludingfwithoutflimita- f tionfwarrantiesfoffnon-infringementfoffintellectualfpropertyf rightsfoffanyfthirdfparty. infor mation forffurtherfinformationfonftechnology,fdeliveryftermsfandf conditionsfandfpricesfpleasefcontactfyourfnearestfinfneonf technologiesfofcef(www.infneon.com). w arnings dueftoftechnicalfrequirementsfcomponentsfmayfcontain f dangerousfsubstances.fforfinformationfonftheftypesfin f questionfpleasefcontactfyourfnearestfinfneonftechnologiesf ofce.finfneonftechnologiesfcomponentsfmayfonlyfbef usedfinflife-supportfdevicesforfsystemsfwithfthefexpressf writtenfapprovalfoffinfneonftechnologies,fiffaffailurefoff suchfcomponentsfcanfreasonablyfbefexpectedftofcausef theffailurefoffthatflife-supportfdeviceforfsystem,forftofafectf thefsafetyforfefectivenessfoffthatfdeviceforfsystem.flifef supportfdevicesforfsystemsfarefintendedftofbefimplantedf infthefhumanfbody,forftofsupportfand/orfmaintainfand f sustainfand/orfprotectfhumanflife.fifftheyffail,fitfisfreason- f ableftofassumefthatfthefhealthfoffthefuserforfotherfpersons f mayfbefendangered. 500vfcoolmos?fcefpowerfmosfet productfportfoliofcoolmos?fce simplified test circuit r ds(on) to-220f f fullpak to-252 dpak to-220f to-247 f ipak 3000fm ipd50r3k0ce* ipu50r3k0ce* 2000fm ipd50r2k0ce** ipu50r2k0ce** 1400fm ipd50r1k4ce* ipu50r1k4ce* 950fm IPA50R950CE ipd50r950ce ipu50r950ce* 800fm ipa50r800ce* ipd50r800ce* 650fm ipa50r650ce* ipd50r650ce* 500fm ipa50r500ce ipd50r500ce ipp50r500ce 380fm ipa50r380ce* ipd50r380ce* ipp50r380ce* 280fm ipa50r280ce ipd50r280ce ipp50r280ce ipw50r280ce 190fm ipa50r190ce* ipp50r190ce* ipw50r190ce* *fsamplesfavailablefbyfq3f/f2012 **fsamplesfavailablefbyfq4f/f2012 applications consumer consumer,flighting pcfsilverbox pcfsilverbox ssl:fsolidfstateflighting ipp50r500ce vs. standard mo s hard commutation on conducting body diode; half bridge con?guration high s ide mos = low s ide mos, s ame r g,su m = 5? i f , forward current through body diode [a ] v ds , ma x , maximum v ds due to high dl rr /dt [v] 500 490 480 470 460 450 440 430 420 410 400 0 1 2 3 4 5 6 7 ipp50r500c e standard mos 12v l ower drai n sourc e overshoot i sd i sd r g,ext r g,ext di f / dt di rr / dt v ds max v ds v ds t t 0v 0a 400v sw dut i mm i f i f 145h s impli?ed waveform when switc hing on of high side mosfet for 2nd time (double pulse) ? fromfi f =1ftofi f =4afbetterfbehaviourfobservedfoff500vfce ? i f f>f4afsamefbehaviourf ? bodyfdiodefconductionf |
